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Effect of Sintering Temperature on Density and …

Densified silicon carbide (SiC) is prepared through dry pressing of SiC powder followed by pressureless sintering in the presence of boron carbide and carbon as the additives. Sintering of SiC parts shows the increase in density with the increase in temperature (1950-2180 °C) by resulting in higher than 98% relative density (RD) at 2150 °C

Disloion and diffusion creep of synthetic anorthite

Abstract. Synthetic fine-grained anorthite aggregates were deformed at 300 MPa confining pressure in a Paterson-type gas deformation apparatus. Creep tests were performed at temperatures ranging from 1140 to 1480 K, stresses from 30 to 600 MPa, and strain rates between 2×10 −6 and 1×10 −3 s −1.We prepared samples with water total contents of 0.004 wt % (dry) and 0.07 wt % (wet

Steady state creep and material parameters in a …

The steady state creep in a rotating disc made of isotropic aluminium–silicon carbide particulate composite has been investigated in the present study. The creep behaviour of the composite has been described by Sherby''s constitutive model.

Asymmetric tip morphology of creep microcracks growing

Asymmetric tip morphology of creep microcracks growing along bimaterial interfac. :2000 : Acta metall, mater. Wol. 40, No. 10, pp. 2683-2691, 1992

A thousandfold creep strengthening by Ca addition in die

2015-11-27 · A thousandfold creep strengthening by Ca addition in die-cast AM50 magnesium all. :4990 :

Impact of stress exponent on steady state creep in a

2017-2-13 · The effect of the stress exponent on the steady state creep in a rotating disc made of isotropic aluminium–silicon carbide particulate (Al–SiCp) composite has been investigated. The creep behaviour of the composite has been described by threshold-stress-based creep law, with different values of true stress exponent n as 3, 5, and 8. The creep parameters appearing in the law have been

Near-net-shape forming of alumina powder under hot

2015-10-23 · Near-net-shape forming of alumina powder under hot pressing and hot isostatic pr.

Newtonian flow process in polycrystalline silicon …

Abstract. Some previous studies on hot-pressed and sintered SiC polycrystalline materials have been reexamined. Mechanical data and microstructures strongly suggest that the Newtonian creep behaviour observed in these SiC materials was induced by a disloion process operating in Harper-Dorn creep, rather than by diffusional creep as concluded before.

Acta Metall.cn

Acta Metall Sin 2014, 50 (1): 41-48. DOI: 10.3724/SP.J.1037.2013.00352 Abstract poor creep resistance and low formability. It is well known that Sn can provide thermally stable Mg 2 Sn particles in the matrix of magnesium alloys. Our previous study shows that the Mg-4Zn-2Al-2Sn alloy has potential to be developed into a wrought Mg alloy.

Microstructural analysis of silicon carbide …

In the development of monofilaments, a good understanding of the process/property relationships is essential. Transmission electron microscopy (TEM) is a powerful tool …

Titanium - Wikipedia

2019-4-23 · Titanium is a chemical element with syol Ti and atomic nuer 22. It is a lustrous transition metal with a silver color, low density, and high strength. Titanium is resistant to corrosion in sea water, aqua regia, and chlorine. Titanium was discovered in Cornwall, Great Britain, by William Gregor in 1791, and was named by Martin Heinrich

DE19708249A1 - Sintered material based on [email protected]

Sintered material based on Si and SiC contains 0.5 wt.% or less SiO2 and 0.25 wt.% or less O2, and is corrosion-resistant in a high temperature atmosphere containing an element with a high capability of forming ionic bonds. Also claimed is a continuous coustion furnace.

Titanium - Wikipedia

2019-4-23 · Titanium is a chemical element with syol Ti and atomic nuer 22. It is a lustrous transition metal with a silver color, low density, and high strength. Titanium is resistant to corrosion in sea water, aqua regia, and chlorine. Titanium was discovered in Cornwall, Great Britain, by William Gregor in 1791, and was named by Martin Heinrich

Metal - Wikipedia

2019-4-23 · Internal slip, creep, and metal fatigue may ensue. The atoms of metallic substances are typically arranged in one of three common crystal structures, namely body-centered cubic (bcc), face-centered cubic (fcc), and hexagonal close-packed (hcp). In bcc, each atom is positioned at the center of a cube of eight others.

INVESTIGATIONS OF INTERFACE PROPERTIES IN COPPER …

2017-7-6 · INVESTIGATIONS OF INTERFACE PROPERTIES IN COPPER-SILICON CARBIDE COMPOSITES This paper analyses the technological aspects of the interface formation in the copper-silicon carbide composite and its effect on the material’s microstructure and properties. Cu-SiC composites with two different volume content of ceramic reinforcement w ere

C15 Composites C15 | Composite Material | Tungsten

C15 Composites C15 - Download as Powerpoint Presentation (.ppt), PDF File (.pdf), Text File (.txt) or view presentation slides online. materiales compuestos

Influence of whisker volume fraction on the creep …

1995-11-11 · Four-point bending creep tests were conducted in air on two alumina matrix composites reinforced with 18 and 30 vol% of silicon carbide whiskers, respectively. In both materials, the SiC whiskers tended to form agglomerates.

Numerical investigation of FAST powder consolidation …

Numerical investigation of FAST powder consolidation of

Zirconium Carbide Produced by Spark Plasma …

2016-7-14 · @article{osti_1326683, title = {Zirconium Carbide Produced by Spark Plasma Sintering and Hot Pressing: Densifiion Kinetics, Grain Growth, and Thermal Properties}, author = {Wei, Xialu and Back, Christina and Izhvanov, Oleg and Haines, Christopher and Olevsky, Eugene}, abstractNote = {Spark plasma sintering (SPS) has been employed to consolidate a micron-sized zirconium carbide …

Rajiv Mishra | Materials Science and Engineering

2019-4-25 · A. B. Pandey, R. S. Mishra and Y. R. Mahajan, "Creep behaviour of an aluminium-silicon carbide particulate composite," Scripta Metallurgica, 24 (1990) 1565. R. S. Mishra and D. Banerjee, "Microstructure and steady state creep in Ti-24Al-llNb," Materials Science and Engineering, A130 (1990) 151. 1989 back to top

Advanced Bonding Technology Based on Nano- and …

Abstract. With the development of silicon carbide (SiC) high-power semiconductor devices, which have the advantages of lower power losses, higher efficiencies, higher thermal conductivities, and higher operational temperatures compared to traditional silicon-based power devices, the demand for high-temperature bonding materials is becoming extremely urgent.

Steady state creep behaviour of silicon carbide

The roles of volume fraction and size of reinfrecement on the steady state creep behaviour of pure aluminium matrix-silicon carbide particulate composites have been studied in the temperature range 623–723 K.The observed apparent stress exponents are higher than 15 and apparent activation energy is 249 kJ mol −1.By considering the existence of a threshold stress, the data for 1.7 μm

Aluminum Silicon Carbide Composites - GlobalSpec

…analyzed with the procedure of Ümit Cöcen, Kazim Önel, and Ismail Özdemir con- cluded that if the stirring prior to set- tling were intense, the clusters would be smaller than with weaker stirring.2 Aluminum silicon carbide composites (Al/SiC) are not accepted…

Effect of Sintering Temperature on Density and …

Densified silicon carbide (SiC) is prepared through dry pressing of SiC powder followed by pressureless sintering in the presence of boron carbide and carbon as the additives. Sintering of SiC parts shows the increase in density with the increase in temperature (1950-2180 °C) by resulting in higher than 98% relative density (RD) at 2150 °C

Creep in Silicon Carbide (SiC) | SpringerLink

Abstract. Silicon carbide (SiC) is a technologically important ceramic, due to its high hardness, optical properties, and thermal conductivity. The high strength of SiC is a consequence of the strong covalent bonds (similar to diamonds) providing resistance to high pressures.

Plastic Deformation of Micromachined Silicon …

2017-1-30 · Meanwhile, silicon undergoes brittle-to-ductile transition at a temperature between 520 °C and 600 °C . The stressed SCS components are therefore susceptible to creep at elevated temperatures. The continuous deformation may result in unacceptable dimensional change, as observed by Mehra et al. in a micromachined silicon coustor .

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